TI Introduces Dual-Voltage Linear Regulator
November 9, 2007 // Published as a news service by IHS
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Texas Instruments Inc. (TI) introduced a dual-level 200-mA low-dropout (LDO) linear regulator.
This device is designed to benefit applications that require two levels of output voltage regulation for programming of eFUSE or subscriber identity module (SIM) cards with additional memory such as wireless handsets, personal digital assistants (PDAs), smart phones, Moving Picture Experts Group (MPEG-1) Audio Layer 3 (MP3) players and other handheld devices.
TI's TPS728185315 LDO features a low dropout of 230 millivolts (mV) with an input voltage range of 2.7 volts (V) to 6.5 V and fixed output voltages between 0.9 V and 3.6 V.
The LDO also comes with Electrically Erasable Programmable Read-Only Memory (EEPROM) preset voltage options of 1.85 V and 3.15 V.
The LDO is billed as enabling the designer to set switchable voltages for eFUSE and SIM cards such as a higher voltage for fuse programming or with detection of the SIM card and a lower voltage at the end of programming.
The designer can switch between two voltages in a finite amount of time without over and undershoots, said TI. Dynamic voltage scaling also helps reduce leakage currents in sub-micron multimillion transistor processors used in portable applications.
An integrated precision bandgap and error amplifier provides an overall 2.5% accuracy over load, line and temperature extremes, according to TI.
The TPS728185315 is designed to provide a high power-supply rejection ratio (PSRR) over a wide frequency range of up to 1 MHz, fast 160 us start-up time and line and load transient response, said TI.
The device is specified over a temperature range of -40 degrees Celsius (C) to 125 C.
Source: Texas Instruments Inc. (TI).