Freescale Expands RF Power Transistor Portfolio for Industrial, Scientific, Broadcast, Pulsed Applications
November 8, 2007 // Published as a news service by IHS
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Freescale Semiconductor expanded its portfolio of 50 volt (V) laterally diffused metal oxide semiconductor (LDMOS) radio frequency (RF) power transistors with three devices that systems designers can use to create ultra-high resolution magnetic resonance imaging (MRI) machines and smaller and more powerful broadcast equipment.
They also can also reduce part counts by 70% for pulsed systems such as advanced weather radars and high power industrial lasers.
Delivering RF output power of 1 kW, the MRF6VP21KH and MRF6VP41KH devices are intended for broadcast, public safety and pulsed applications.
The MRF6VP2600H device delivers peak RF output power of 600 W continuous wave (CW) and is intended for industrial, scientific and broadcast applications.
The new devices are based on Freescale's sixth-generation, high-voltage (VHV6) 50 V LDMOS technology.
"Requirements for RF power devices are quite stringent in broadcast and industrial markets, where efficiency, ruggedness and reliability are critical," said Gavin P. Woods, vice president and general manager of the Freescale Semiconductor RF division. "Our 50V VHV6 LDMOS devices have a solid track record of meeting these challenges while delivering industry leading power and performance metrics."
Two of the devices are aimed at pulsed operation, and the third can be used for both CW and pulsed operation. Specifications for the three devices are:
- MRF6VP21KH: 10 to 235 MHz frequency range, 1 kW peak output power (at 225 MHz, 100 µs pulse width, 20% duty cycle), 24 dB gain, 67.5% efficiency, and low thermal resistance under pulsed conditions. Typical applications include digital very high frequency (VHF) television transmitters as well as HF and VHF communications systems.
- MRF6VP41KH: 10 to 450 MHz frequency range, 1 kW peak output power (at 450 MHz, 100 µs pulse width, 20% duty cycle), 20.5 dB gain, 64% efficiency, and low thermal resistance under pulsed conditions. Typical applications include radar and public safety communications systems.
- MRF6VP2600H: 10 to 250 MHz frequency range, 600 W CW P1dB output power (at 225 MHz), 125 W output power in typical orthogonal frequency division multiplexing (OFDM) direct video broadcast-terrestrial (DVB-T) TV service, 25.8 dB gain, 29% efficiency, adjacent channel power ratio (ACPR) at 4 MHz offset of -61 dBc. Typical applications include FM broadcast transmitters, analog and digital VHF television transmitters and industrial systems.
All three devices are designed in air-cavity packaging and are restriction of the use of certain hazardous substances (RoHS) compliant.
Available in a bolt-down option, the MRF6VP41KHS is available in a push-pull solder down mounting optimized package (the NI-1230S). The push-pull solder down mounting option presents a smaller footprint than traditional air-cavity packages. The package is RoHS compliant and is also compatible for use with lead-based solder.
The MRF6VP21KH, MRF6VP41KH and MRF6VP2600H are sampling now, and full production is expected in December 2007. Reference text fixtures are available for all three devices. Large-signal models are expected to be available for the devices in early 2008.
Source: Freescale Semiconductor Inc.