STMicroelectronics' MDmesh V Power-MOSFET Achieves 'Best' On-Resistance per Area in 650 V Rating
March 15, 2009 // Published as a news service by IHS
The metal-oxide-semiconductor field-effect transistors (MOSFETs) from STMicroelectronics (ST) achieved one of the best on-resistance per die areas with its MDmesh V product, according to ST.
MDmesh V is designed to enable 650 volt (V) MOSFETs with RDS (on) reaching below 0.079 ohm to deliver power density. These devices target power-conversion systems where small size and low energy consumption are goals for design engineers, said ST experts.
ST specified RDS (on) of 0.079 ohms for the 33A STP42N65M5 in the TO-220 package. The STx42N65M5 family offers additional package options including the surface-mount D2PAK, as well as TO-220FP, I2PAK and TO-247.
The STx16N65M5 family, also at 650 V, is in production and rated at 0.299 ohm RDS (on) and 12A.
ST's roadmap for MDmesh V 650 volt MOSFETs includes higher current devices with RDS (on) as low as 0.022 ohms in Max247 and 0.038 ohms in TO-247, said ST experts. These devices will be available in March 2009.
As the latest evolution of ST's multi-drain mesh technology, MDmesh V achieves an "outstanding" RDS (on) per area by improving the transistor drain structure to lower the drain-source voltage drop, according to ST.
This reduces the device's on-state losses while also maintaining low gate charge (Qg), enabling energy-efficient switching at high speeds and delivering a low RDS (on) x Qg figure of merit.
The breakdown voltage of 650 V is also higher and delivers a safety margin for designers, said ST experts. ST's MDmesh V MOSFETs is touted as having a cleaner turn-off waveform and helps enable easier gate control and simpler filtering due to reduced electromagnetic interference.
MDmesh V MOSFETs is designed for end-user products such as laptop power adapters, LCD monitors and TVs, lighting ballasts, telecom equipment, solar converters and other applications requiring high-voltage power-factor correction or switched-mode power conversion, said ST experts.
"The improvement in RDS (on) achieved with MDmesh V will significantly reduce losses in line-voltage PFC circuits and power supplies, which will in turn enable new generations of electronic products offering better energy ratings and smaller dimensions," said Maurizio Giudice, marketing director of the power MOSFET division at ST.
"This new technology will help product designers tackle emerging challenges such as the high efficiency targets of new eco-design directives and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules," Giudice said.
Source: STMicroelectronics.