Sematech, Canon ANELVA to Develop Materials, Processes for Future Non-Volatile Memory Devices
April 26, 2009 // Published as a news service by IHS
Canon Analysis Electronics Vacuum (ANELVA) Corp. is joining the Sematech Inc. Front End Processes (FEP) Program to help develop materials and process techniques for future non-volatile memory (NVM) applications.
To further advance scaling of next-generation memory materials for sub 40 nanometer (nm) nodes, Canon ANELVA will collaborate with experts from Sematech's FEP program on the development of nanoscale, uniform dielectrics and metal films for NVM applications, using Canon ANELVA's physical vapor deposition (PVD) technology for memory-based applications.
These dielectric and electrode materials are expected to improve data retention and the speed of program and erase in charge trap and floating gate flash memory architectures, according to Sematech.
Within the NVM semiconductor industry, shrinkage of device dimensions to reduce cost per function presents several issues for flash memory scaling, such as tunnel oxide integrity, capacitive coupling between control and floating gate and cross talk between adjacent devices, experts said.
Sematech and Canon ANELVAs collaboration will focus on developing a new set of materials to address these scaling challenges for flash memory.
The collaboration will be conducted between the research teams of Sematech's FEP device and reliability experts and Canon ANELVA's semiconductor equipment engineers.
Sematech's FEP program is aimed at developing new techniques for extending high-k dielectrics, metal gates, high mobility channels and advanced memory technologies in collaboration with member companies, universities, national labs and supplier partners.
Source: Sematech Inc.