Intel, Micron Mass Produce 34 Nm NAND Flash for Small Form Factor Applications
November 29, 2008 // Published as a news service by IHS
Intel Corp. and Micron Technology Inc. announced mass production of their jointly developed 34 nanometer (nm), 32 Gb multilevel cell (MLC) Not And (NAND) flash memory device.
The 34 nm, 32 Gb chips are manufactured on 300 millimeter (mm) wafers. Measuring 172 square mm, the chips will enable high-density, solid-state storage in small form factor applications including digital cameras, personal music players and digital camcorders, the companies said.
Developed and manufactured by IM Flash Technologies (IMFT), the process technology enables a 32 Gb NAND chip that fits into a standard 48-lead thin small-outline package (TSOP).
The companies said they are ahead of schedule with 34 nm NAND production. They also said the chip will enable more cost-effective solid-state drives, increasing their current storage capacity.
"We have made great strides in NAND process capability and are now in a leadership role with 34 nm production,” said Brian Shirley, vice president of the Micron memory group.
"The tiny 34 nm, 32 Gb chip enables our customers to easily increase their NAND storage capacity for a number of consumer and computing products," Shirley said.
The companies also plan to begin sampling lower density MLC and single-level cell (SLC) products using the 34 nm process technology in early 2009.
Source: Micron Technology Inc.